NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Measuring oxide trapping parameters in MOS structureSystem for controlled injection of electrons or holes into oxide layer of MOS capacitor can be used to measure oxide trapping parameters. Since trapping mechanisms can cause degradation and ultimate failure of MOS elements exposed to ionizing radiation, system can be helpful in predicting device tolerance.
Document ID
19780000002
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Maserjian, J.
Date Acquired
August 9, 2013
Publication Date
June 1, 1978
Publication Information
Publication: NASA Tech Briefs
Volume: 3
Issue: 1
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
NPO-14120
Accession Number
78B10002
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Available Downloads

There are no available downloads for this record.
No Preview Available