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Chemical-vapor deposition of silicon from silaneReport lists tables of standard free-energy change, equilibrium constant, and heat of reaction for chemical vapor deposition (CVD) of silicon from silane over temperature range of 100 to 1000 K. Data indicates silicon CVD may be a commercially economical process for production of silicon for solar arrays and other applications.
Document ID
19780000502
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hsu, G. C.
Lutwack, R.
Praturi, A. K.
Date Acquired
August 9, 2013
Publication Date
March 1, 1979
Publication Information
Publication: NASA Tech Briefs
Volume: 3
Issue: 4
ISSN: 0145-319X
Subject Category
Physical Sciences
Report/Patent Number
NPO-14403
Accession Number
78B10502
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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