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GaAs solar cell developmentThe motivation for developing GaAs solar cells is based on their superior efficiency when compared to silicon cells, their lower degradation with increasing temperature, and the expectation for better resistance to space radiation damage. The AMO efficiency of GaAs solar cells was calculated. A key consideration in the HRL technology is the production of GaAs cells of large area (greater than 4 sg cm) at a reasonable cost without sacrificing efficiency. An essential requirement for the successful fabrication of such cells is the ability to grow epitaxially a uniform layer of high quality GaAs (buffer layer) on state-of-the-art GaAs substrates, and to grow on this buffer layer the required than layer of (AlGa)As. A modified infinite melt liquid phase epitaxy (LPE) growth technique is detailed.
Document ID
19780005601
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Knechtli, R. C.
(Hughes Research Labs. Malibu, CA, United States)
Kamath, S.
(Hughes Research Labs. Malibu, CA, United States)
Loo, R.
(Hughes Research Labs. Malibu, CA, United States)
Date Acquired
August 9, 2013
Publication Date
January 1, 1977
Publication Information
Publication: NASA. Lewis Res. Center Solar Cell High Efficiency and Radiation Damage
Subject Category
Energy Production And Conversion
Accession Number
78N13544
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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