Single crystal and polycrystalline GaAs solar cells using AMOS technologyA description is given of current technology for fabricating single AMOS (antireflection-coated metal oxide semiconductor) solar cells, with attention given to thermal, plasma, and anodic oxidation, native oxide stripping, and X-ray photoelectron spectroscopy results. Some preliminary results are presented on the chemistry and electrical characterization of such cells, and the characteristics of cells fabricated on sliced polycrystalline GaAs wafers are examined. Consideration is also given to the recrystallization of evaporated Ge films for use as low-cost substrates for polycrystalline GaAs solar cells.
Document ID
19780027135
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Stirn, R. J. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Yeh, Y. C. M. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)