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Fabrication of OSOS cells by neutral ion beam sputteringOxide semiconductor on silicon (OSOS) solar cells have been fabricated from various indium tin oxide (In2O3)x(SnO2)1-x compositions sputtered onto p-type single crystal silicon substrates with a neutralized argon ion beam. High temperature processing or annealing was not required. The highest efficiency was achieved with x = 0.91 and was 12 percent. The cells are environmentally rugged, chemically stable, and show promise for still higher efficiencies. Moreover, the ion beam sputtering fabrication technique is amenable to low cost, continuous processing.
Document ID
19780027153
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Burk, D. E.
(Colorado State Univ. Fort Collins, CO, United States)
Dubow, J. B.
(Colorado State Univ. Fort Collins, CO, United States)
Sites, J. R.
(Colorado State University Fort Collins, Colo., United States)
Date Acquired
August 9, 2013
Publication Date
January 1, 1976
Subject Category
Energy Production And Conversion
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: Baton Rouge, LA
Start Date: November 15, 1976
End Date: November 18, 1976
Accession Number
78A11062
Funding Number(s)
CONTRACT_GRANT: NSG-3083
CONTRACT_GRANT: E(04-3)-1203
Distribution Limits
Public
Copyright
Other

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