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Recombination-generation currents in degenerate semiconductorsThe classical Shockley-Read-Hall theory of free carrier recombination and generation via traps is extended to degenerate semiconductors. A concise and simple expression is found which avoids completely the concept of a Fermi level, a concept which is alien to nonequilibrium situations. Assumptions made in deriving the recombination generation current are carefully delineated and are found to be basically identical to those made in the original theory applicable to nondegenerate semiconductors.
Document ID
19780051376
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Von Roos, O.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 9, 2013
Publication Date
April 1, 1978
Publication Information
Publication: Solid-State Electronics
Volume: 21
Subject Category
Electronics And Electrical Engineering
Accession Number
78A35285
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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