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Red-emitting Ga/As,P///In,Ga/P heterojunction lasersThe paper describes in detail the properties of vapor-grown double-heterojunction lasers of Ga(As,P)/(In,Ga)P with room-temperature threshold current densities as low as 3400 A/sq cm at 7000 A and 6600 A/sq cm at 6800 A. These thresholds are three to eight times smaller than those of (Al,Ga)As lasers in this wavelength range due to the shorter-wavelength direct-indirect transition in Ga(As,P). The optical and electrical characteristics of the Ga(As,P)/(In,Ga)P lasers are found to be similar to those of (Al,Ga)As, with fundamental transverse-mode operation to 70 C, and spontaneous carrier lifetimes between 5 and 8 nsec typically observed at low current densities.
Document ID
19780054628
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Kressel, H.
(RCA Labs. Princeton, NJ, United States)
Nuese, C. J.
(RCA Labs. Princeton, NJ, United States)
Olsen, G. H.
(RCA Laboratories Princeton, N.J., United States)
Date Acquired
August 9, 2013
Publication Date
June 1, 1978
Publication Information
Publication: Journal of Applied Physics
Volume: 49
Subject Category
Lasers And Masers
Accession Number
78A38537
Distribution Limits
Public
Copyright
Other

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