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Effects of ultrathin oxides in conducting MIS structures on GaAsSchottky barrier-type GaAs baseline devices (semiconductor surface etched and then immediately metalized) and GaAs conducting metal oxide-semiconductor devices are fabricated and characterized. The baseline surfaces (no purposeful oxide) are prepared by a basic or an acidic etch, while the surface for the MIS devices are prepared by oxidizing after the etch step. The metallizations used are thin-film Au, Ag, Pd, and Al. It is shown that the introduction of purposeful oxide into these Schottky barrier-type structures examined on n-type GaAs modifies the barrier formation, and that thin interfacial layers can modify barrier formation through trapping and perhaps chemical reactions. For Au- and Pd-devices, enhanced photovoltaic performance of the MIS configuration is due to increased barrier height.
Document ID
19780065541
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Childs, R. B.
(Pennsylvania State Univ. University Park, PA, United States)
Ruths, J. M.
(Pennsylvania State Univ. University Park, PA, United States)
Sullivan, T. E.
(Pennsylvania State Univ. University Park, PA, United States)
Fonash, S. J.
(Pennsylvania State University University Park, Pa., United States)
Date Acquired
August 9, 2013
Publication Date
August 1, 1978
Subject Category
Solid-State Physics
Accession Number
78A49450
Funding Number(s)
CONTRACT_GRANT: JPL-954525
CONTRACT_GRANT: NSF ENG-76-12874
Distribution Limits
Public
Copyright
Other

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