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Recovery of shallow junction GaAs solar cells damaged by electron irradiationSolar cells operated in space are subject to degradation from electron and proton radiation damage. It has been found that for deep junction p-GaAlAs/p-GaAs solar cells some of the electron radiation damage is removed by annealing the cells at 200 C. The reported investigation shows that shallow junction p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells irradiated with 1 MeV electrons show a more complete recovery of short-circuit current than do the deep junction cells. The heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells studied were fabricated using the etch-back epitaxy process.
Document ID
19780068289
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Walker, G. H.
(NASA Langley Research Center Hampton, VA, United States)
Conway, E. J.
(NASA Langley Research Center Hampton, Va., United States)
Date Acquired
August 9, 2013
Publication Date
October 1, 1978
Publication Information
Publication: Electrochemical Society
Subject Category
Energy Production And Conversion
Accession Number
78A52198
Distribution Limits
Public
Copyright
Other

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