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Precise wet-chemical etchingControlled amount of etchant applied to surface of rotating sample removes only few angstroms of material. Technique is suited to study of chemical and crystal structures. Rate can be varied through control of spin frequency, liquid viscosity, droplet size, total etchant volume, etchant concentration.
Document ID
19790000364
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Grunthaner, F. J.
(Caltech)
Date Acquired
August 10, 2013
Publication Date
April 1, 1980
Publication Information
Publication: NASA Tech Briefs
Volume: 4
Issue: 3
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
NPO-14339
Accession Number
79B10364
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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