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Improved degradation resistance of (AlGa)As lasersSimultaneous doping with Ge and Zn improves degradation resistance of short-wavelength (AlGa)As lasers. Method opens up prospects for greatly increased reliability in lasers and LED's operating at 7,500 angstroms or below.
Document ID
19790000486
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Kressel, H.
(RCA Corp.)
Ladany, J.
(RCA Corp.)
Date Acquired
August 10, 2013
Publication Date
June 1, 1980
Publication Information
Publication: NASA Tech Briefs
Volume: 4
Issue: 4
ISSN: 0145-319X
Subject Category
Physical Sciences
Report/Patent Number
LAR-12242
Accession Number
79B10486
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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