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Ohmic contact to p-type indium phosphideLow-Series-resistance ohmic contact to p-type InP semiconductor material is achieved in technique utilizing Au-Ge-Zn eutectic alloy. Alloy sets and adheres well to semiconductor surface with higher acceptor concentration at metal semiconductor interface. Technique has provided satisfactory for pn junction LED's and lasers.
Document ID
19790000490
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hawrylo, F. Z. (RCA Corp.)
Date Acquired
August 10, 2013
Publication Date
June 1, 1980
Publication Information
Publication: NASA Tech Briefs
Volume: 4
Issue: 4
ISSN: 0145-319X
Subject Category
Physical Sciences
Report/Patent Number
LAR-12351
Accession Number
79B10490
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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