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Multilayer metalization of MOS IC'sModified ion-bombardment technqiue interconnects MOS circuit elements without affecting circuit parameters. Multilevel metalization involves: surface treatment prior to metalization; first metalization; metal pattern definition and photoresist removal; dielectric deposition; second metalization; and final dielectric deposition.
Document ID
19790000562
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Bouldin, D. L.
Feltner, W. R.
Hollis, B. R., Jr.
Routh, D. E.
Date Acquired
August 10, 2013
Publication Date
June 1, 1980
Publication Information
Publication: NASA Tech Briefs
Volume: 4
Issue: 4
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
MFS-23541
Accession Number
79B10562
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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