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Modified silicon-germanium alloys with improved performanceThis paper discusses the results of a program on the modification of silicon-germanium alloys by means of small extraneous material additions in order to improve their figures-of-merit. A review of the properties that constitute the figure-of-merit indicates that it is the relatively high thermal conductivity of silicon-germanium alloys that is responsible for their low values of figure-of-merit. The intent of the effort discussed in this paper is therefore the reduction of the thermal conductivity of silicon-germanium alloys by minor alloy additions and/or changes in the basic structure of the material. Because Group III and V elements are compatible with silicon and germanium, the present effort in modifying silicon-germanium alloys has concentrated on additions of gallium phosphide. A significant reduction in thermal conductivity, approximately 40 to 50 percent, has been demonstrated while the electrical properties are only slightly affected as a result. The figure-of-merit of the resultant material is enhanced over that of silicon-germanium alloys and when fully optimized is potentially better than that of any other presently available thermoelectric material.
Document ID
19790026212
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Pisharody, R. K.
(Syncal Corp. Sunnyvale, Calif., United States)
Garvey, L. P.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 9, 2013
Publication Date
January 1, 1978
Subject Category
Solid-State Physics
Meeting Information
Meeting: Intersociety Energy Conversion Engineering Conference
Location: San Diego, CA
Start Date: August 20, 1978
End Date: August 25, 1978
Accession Number
79A10225
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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