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A monolithic SAW-charge transfer deviceSurface acoustic waves excited in a Si-SiO2-ZnO layered structure can produce a traveling electric field in the silicon substrate. Charges stored in the traveling potential wells can be transferred at high speed and density and with less complexity. The monolithic structure under investigation for the SAW-charge transfer device consists of a silicon substrate, a thin silicon dioxide insulating layer on top of which a ZnO piezoelectric film is deposited by sputtering. The surface acoustic waves are excited by interdigital transducers. The signal charge is injected into traveling potential wells that travel with the velocity of sound. Conditions for the transfer of the charges by the traveling wells are analyzed. A surface acoustic wave program was used to determine the optimum structure dimensions and transducer configuration which will produce the highest coupling in the excitation of the piezoelectric waves.
Document ID
19790029827
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Papanicolaou, N. A.
(Maryland Univ. College Park, MD, United States)
Lin, H. C.
(Maryland, University College Park, Md., United States)
Date Acquired
August 9, 2013
Publication Date
November 1, 1978
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
AIAA PAPER 78-1724
Meeting Information
Meeting: American Institute of Aeronautics and Astronautics and NASA, Conference on ''Smart'' Sensors
Location: Hampton, VA
Start Date: November 14, 1978
End Date: November 16, 1978
Sponsors: Astronautics, NASA, American Institute of Aeronautics
Accession Number
79A13840
Distribution Limits
Public
Copyright
Other

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