NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Radiation hardened PMOS process with ion implanted threshold adjustBy including specific process modifications the effect of ion implantation on radiation hardness can be minimized and radiation hard ion implanted MOS circuits can be fabricated. The experimental procedure followed was to examine key processing steps (with respect to radiation hardness) on ion-implanted individual PMOS transistors. The individual transistors were evaluated by continuously monitoring the threshold voltage as the transistors were being irradiated. By comparing runs it was possible to deduce what is considered a radiation hard ion implanted process. Tests with a complex LSI PMOS IC processor chip containing over 2000 transistors and resistors were also conducted
Document ID
19790044903
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Jhabvala, M.
(NASA Goddard Space Flight Center Greenbelt, Md., United States)
Date Acquired
August 9, 2013
Publication Date
February 1, 1979
Subject Category
Electronics And Electrical Engineering
Accession Number
79A28916
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available