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Trapping effects in irradiated and avalanche-injected MOS capacitorsThe trapping parameters for holes, and for electrons in the presence of trapped holes, have been measured from a set of wafers with different oxide thickness processed under controlled conditions. The trap cross-sections and densities indicate at least three trap species, including an interfacial species, a dominant bulk species which is determined to tail off from the silicon interface, and a third, lower density bulk species that is distributed throughout the oxide.
Document ID
19790046119
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Bakowski, M.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Cockrum, R. H.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Zamani, N.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Maserjian, J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Viswanathan, C. R.
(California, University Los Angeles, Calif., United States)
Date Acquired
August 9, 2013
Publication Date
December 1, 1978
Subject Category
Electronics And Electrical Engineering
Accession Number
79A30132
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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