Design considerations for silicon HLE solar cellsThe high-low (H-L) junction in the emitter region that defines the high-low-junction emitter (HLE) solar cell suppresses the dark emitter recombination current J sub E so that the base recombination current dominates in determining the open-circuit voltage. For silicon cells this enables the achievement of considerably larger values of open-circuit voltage than those achievable in conventional structures. This paper describes experiments that demonstrate the achievement of J sub E suppression (to less than 5 x 10 to the -14th A/sq cm) and large open-circuit voltage (640 mV) in HLE test cells of two distinct types. In the first type (the diffused HLE structure) impurity diffusion forms the H-L junction in the emitter; in the second type (the oxide-charge-induced HLE structure) the H-L junction is formed in emitter material of relatively low doping concentration by an oxide-charge-induced electron accumulation layer.
Document ID
19790057081
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Lindholm, F. A. (Florida Univ. Gainesville, FL, United States)
Neugroschel, A. (Florida Univ. Gainesville, FL, United States)
Pao, S. C. (Florida, University Gainesville, Fla., United States)
Fossum, J. G. (Sandia Laboratories Albuquerque, N. Mex., United States)
Sah, C. T. (Illinois, University Urbana, Ill., United States)