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Internal stress and degradation in short-wavelength AlGaAs double-heterojunction devicesAging tests of incoherently operated zinc-doped double-heterojunction (DH) lasers designed for short-wavelength (0.71-0.72 micron) operation show that the introduction of buffer layers between the substrate and the DH structure leads to a drastic reduction in gradual degradation. This is attributed to a decrease in lattice mismatch stress.
Document ID
19790057520
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Ladany, I.
(RCA Labs. Princeton, NJ, United States)
Furman, T. R.
(RCA Labs. Princeton, NJ, United States)
Marinelli, D. P.
(RCA Laboratories Princeton, N.J., United States)
Date Acquired
August 9, 2013
Publication Date
June 7, 1979
Publication Information
Publication: Electronics Letters
Volume: 15
Subject Category
Electronics And Electrical Engineering
Accession Number
79A41533
Distribution Limits
Public
Copyright
Other

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