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III-V alloy heterostructure high speed avalanche photodiodesHeterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 micron. Early stages of development show very encouraging results. High speed response of less than 35 ps and high quantum efficiency more than 95 percent have been obtained. The dark currents and the excess avalanche noise are also dicussed. A direct comparison of GaAlSb, GaAlAsSb, and In GaAsP avalanche photodiodes is given.
Document ID
19790060195
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Law, H. D.
(Rockwell International Science Center Thousand Oaks, CA, United States)
Nakano, K.
(Rockwell International Science Center Thousand Oaks, CA, United States)
Tomasetta, L. R.
(Rockwell International Science Center Thousand Oaks, Calif., United States)
Date Acquired
August 9, 2013
Publication Date
July 1, 1979
Publication Information
Publication: IEEE Journal of Quantum Electronics
Volume: QE-15
Subject Category
Electronics And Electrical Engineering
Accession Number
79A44208
Funding Number(s)
CONTRACT_GRANT: F33615-77-C-1005
CONTRACT_GRANT: NAS5-23862
Distribution Limits
Public
Copyright
Other

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