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Phase transitions in Group III-V and II-VI semiconductors at high pressureThe structures and transition pressures of Group III-V and II-VI semiconductors and of a pseudobinary system (Ga/x/In/1-x/Sb) have been investigated. Results indicate that GaP, InSb, GaSb, GaAs and possible AlP assume Metallic structures at high pressures; a tetragonal, beta-Sn-like structure is adopted by only InSb and GaSb. The rocksalt phase is preferred in InP, InAs, AlSb, ZnO and ZnS. The model of Van Vechten (1973) gives transition pressures which are in good agreement with measured values, but must be refined to account for the occurrence of the ionic rocksalt structure in some compounds. In addition, discrepancies between the theoretical scaling values for volume changes at the semiconductor-to-metal transitions are observed.
Document ID
19790061044
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Yu, S. C.
(Maryland Univ. College Park, MD, United States)
Liu, C. Y.
(Maryland Univ. College Park, MD, United States)
Spain, I. L.
(Maryland, University College Park, Md., United States)
Skelton, E. F.
(U.S. Navy, Naval Research Laboratory, Washington D.C., United States)
Date Acquired
August 9, 2013
Publication Date
January 1, 1979
Subject Category
Solid-State Physics
Meeting Information
Meeting: High-pressure science and technology; Sixth International Conference
Location: Boulder, CO
Start Date: July 25, 1977
End Date: July 29, 1977
Sponsors: NASA
Accession Number
79A45057
Distribution Limits
Public
Copyright
Other

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