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JANTX2N2369A transistorReport describes effects of power and temperature overstress on National Semiconductor and Raytheon transistors. Good junction quality was maintained. Gain losses predominated. Other failures are reported.
Document ID
19800000020
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Date Acquired
August 10, 2013
Publication Date
August 1, 1980
Publication Information
Publication: NASA Tech Briefs
Volume: 5
Issue: 1
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
MFS-25254
Accession Number
80B10020
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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