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Progress in MOSFET double-layer metalizationReport describes one-year research effort in VLSL fabrication. Four activities are described: theoretical study of two-dimensional diffusion in SOS (silicon-on-sapphire); setup of sputtering system, furnaces, and photolithography equipment; experiments on double layer metal; and investigation of two-dimensional modeling of MOSFET's (metal-oxide-semiconductor field-effect transistors).
Document ID
19800000280
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Gassaway, J. D.
(Mississippi State Univ.)
Trotter, J. D.
(Mississippi State Univ.)
Wade, T. E.
(Mississippi State Univ.)
Date Acquired
August 10, 2013
Publication Date
September 1, 1980
Publication Information
Publication: NASA Tech Briefs
Volume: 5
Issue: 2
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
MFS-25239
Accession Number
80B10280
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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