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CADAT field-effect-transistor simulatorCADAT field-effect transistor simulator (FETSIM) analyzes dc and transient behavior of metal-oxide-semiconductor (MOS) circuits. Both N-MOS and P-MOS transistor configurations in either bulk of silicon-on-sapphire (SOS) technology and almost any combination of R/C elements are analyzed.
Document ID
19800000434
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Date Acquired
August 10, 2013
Publication Date
January 1, 1981
Publication Information
Publication: NASA Tech Briefs
Volume: 5
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
MFS-25067
Accession Number
80B10434
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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