Characterization and properties of controlled nucleation thermochemical deposited /CNTD/ silicon carbide

Results are presented for an investigation designed to characterize the microstructure of controlled nucleation thermomechanical deposition (CNTD) produced SiC material with respect to grain structure, stoichiometry, phase analysis, etc., and to evaluate the room-temperature and high-temperature fracture and oxidation behavior. By using the CNTD process, ultrafine-grained SiC is deposited on tungsten wires as substrates, with superior surface smoothness and without the macrocolumnar growth commonly observed in conventional CVD materials. The results suggest that the high-purity, fully dense, and stable grain size SiC material produced by CNTD shows potential for high-temperature structural applications, provided that pertinent problems are resolved.