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Determination of carrier concentration and compensation microprofiles in GaAsSimultaneous microprofiling of semiconductor free carrier, donor, and acceptor concentrations was achieved for the first time from the absolute value of the free carrier absorption coefficient and its wavelength dependence determined by IR absorption in a scanning mode. Employing Ge- and Si-doped melt-grown GaAs, striking differences were found between the variations of electron concentration and those of ionized impurity concentrations. These results showed clearly that the electronic characteristics of this material are controlled by amphoteric doping and deviations from stoichiometry rather than by impurity segregation.
Document ID
19800049618
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Jastrzebski, L.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lagowski, J.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Walukiewicz, W.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C.
(MIT Cambridge, Mass., United States)
Date Acquired
August 10, 2013
Publication Date
April 1, 1980
Publication Information
Publication: Journal of Applied Physics
Volume: 51
Subject Category
Solid-State Physics
Accession Number
80A33788
Distribution Limits
Public
Copyright
Other

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