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Origin of reverse annealing in radiation-damaged silicon solar cellsThe paper employs relative defect concentrations, energy levels, capture cross sections, and minority carrier diffusion lengths in order to identify the defect responsible for the reverse annealing observed in a radiation damaged n(+)/p silicon solar cell. It is reported that the responsible defect, with the energy level at +0.30 eV, has been tentatively identified as boron-oxygen-vacancy complex. In conclusion, it is shown that removal of this defect could result in significant cell recovery when annealing at temperatures well below the currently required 400 C.
Document ID
19800049680
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Weinberg, I.
(NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K.
(NASA Lewis Research Center Cleveland, Ohio, United States)
Date Acquired
August 10, 2013
Publication Date
April 15, 1980
Publication Information
Publication: Applied Physics Letters
Volume: 36
Subject Category
Spacecraft Propulsion And Power
Accession Number
80A33850
Distribution Limits
Public
Copyright
Other

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