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Impurities in silicon solar cellsThe paper investigates the effects of metallic impurities on the performance of silicon solar cells. Czochralski and polycrystalline ingots were employed with boron and phosphorus as primary dopants and with controlled additions of secondary impurities. The data obtained from over 200 crystals indicate that impurity-induced performance loss is primarily due to a reduction of the base diffusion length. Based on this observation, a model is developed which predicts cell performance as a function of secondary impurity concentrations. The model calculations are in good agreement with experimental values except for Cu, Ni, Fe, and to a lesser degree, carbon, which at higher concentrations degrade the cell by junction defect mechanisms.
Document ID
19800051174
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Davis, J. R., Jr.
(Westinghouse Research and Development Center Pittsburgh, PA, United States)
Rohatgi, A.
(Westinghouse Research and Development Center Pittsburgh, PA, United States)
Hopkins, R. H.
(Westinghouse Research and Development Center Pittsburgh, PA, United States)
Blais, P. D.
(Westinghouse Research and Development Center Pittsburgh, PA, United States)
Rai-Choudhury, P.
(Westinghouse Research and Development Center Pittsburgh, Pa., United States)
Mccormick, J. R.
(Westinghouse Research and Development Center Pittsburgh, PA, United States)
Mollenkopf, H. C.
(Hemlock Semiconductor Corp. Midland, Mich., United States)
Date Acquired
August 10, 2013
Publication Date
April 1, 1980
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: ED-27
Subject Category
Solid-State Physics
Accession Number
80A35344
Distribution Limits
Public
Copyright
Other

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