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A study of the factors which control the efficiency of ion-implanted silicon solar cellsThe objective of this work was to determine experimentally the ion-implantation parameters and furnace annealing conditions required to produce high-efficiency solar cells. A comprehensive experimental study was conducted in which the optimum ion-implantation parameters were found by a systematic variation of the implant parameters followed by detailed studies of solar-cell devices. Two furnace heat-treatment techniques were found which effectively anneal the implanted layers and at the same time preserve or improve the diffusion length in the bulk silicon. Detailed characteristics of both the junction and bulk properties of solar cells fabricated over the spectrum of implant parameters are discussed. Optimized implant parameters and annealing conditions were found which allow for the fabrication of 14-15-percent (AM1) efficient solar cells.
Document ID
19800051190
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Douglas, E. C.
(David Sarnoff Research Center Princeton, NJ, United States)
Daiello, R. V.
(RCA David Sarnoff Research Center Princeton, N.J., United States)
Date Acquired
August 10, 2013
Publication Date
April 1, 1980
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: ED-27
Subject Category
Energy Production And Conversion
Accession Number
80A35360
Funding Number(s)
CONTRACT_GRANT: JPL-954868
Distribution Limits
Public
Copyright
Other

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