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Photoemission measurements of interface barrier energies for tunnel oxides on siliconInternal photoemission measurements of the Si/SiO2 and Al/SiO2 barrier heights on oxides of tunneling thickness (43-56 A) are compared with measurements on thick oxides (310 A and greater) and the barrier heights are found to be the same. The results suggest that substantially thinner oxides, grown by the same method, can be characterized by the same barrier heights. Limits to the experimental technique posed by photovoltaic and displacement currents, and transport of hot carriers in the tunnel oxide are discussed.
Document ID
19800052766
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Dressendorfer, P. V.
(Yale Univ. New Haven, CT, United States)
Barker, R. C.
(Yale University New Haven, Conn., United States)
Date Acquired
August 10, 2013
Publication Date
June 1, 1980
Publication Information
Publication: Applied Physics Letters
Volume: 36
Subject Category
Solid-State Physics
Accession Number
80A36936
Distribution Limits
Public
Copyright
Other

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