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Large optical cavity AlGaAs injection lasers with multiple active regionsA new type of AlGaAs injection laser is presented whose basic structure consists of alternating p- and n-type layers of GaAs and Al(x)Ga(1-x), with the GaAs layers serving as the active regions of the device. The electrical mode of operation is found to be that of a bistable device (SCR) and not of a simple pn junction. Optically, the device oscillates in a 'supermode' made up of a coherent superposition of single waveguide modes. Possible applications include pulsed mode operation of injection lasers and power combining of the output of many individual lasers.
Document ID
19800062751
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Katz, J.
(California Inst. of Tech. Pasadena, CA, United States)
Bar-Chaim, N.
(California Inst. of Tech. Pasadena, CA, United States)
Margalit, S.
(California Inst. of Tech. Pasadena, CA, United States)
Yariv, A.
(California Institute of Technology Pasadena, Calif., United States)
Date Acquired
August 10, 2013
Publication Date
August 1, 1980
Publication Information
Publication: Journal of Applied Physics
Volume: 51
Subject Category
Lasers And Masers
Accession Number
80A46921
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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