Effects of thermal annealing on the deep-level defects and I-V characteristics of 200 keV proton irradiated AlGaAs-GaAs solar cellsDetailed characterization of deep-level defects and analysis of dark I-V data in 200 keV proton irradiated AlGaAs-GaAs solar cells have been carried out for several proton fluences (5 x 10 to the 11th, 10 to the 12th, and 10 to the 13th P/sq cm), using DLTS, C-V, and I-V measurement techniques. To study the effect of low temperature thermal annealing on the deep-level defect properties, these irradiated samples were annealed in vacuum at 300 C for one hour. Comparison was then made on the measured defect parameters (i.e., defect energy levels and densities) and the dark I-V characteristics for both the annealed and unannealed samples.
Document ID
19800064034
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Li, S. S. (Florida Univ. Gainesville, FL, United States)
Schoenfeld, D. W. (Florida Univ. Gainesville, FL, United States)
Chiu, T. T. (Florida, University Gainesville, Fla., United States)
Loo, R. Y. (Hughes Research Laboratories Malibu, Calif., United States)