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Study of GaAs-oxide interface by transient capacitance spectroscopy - Discrete energy interface statesInterface states and bulk GaAs energy levels were simultaneously investigated in GaAs MOS structures prepared by anodic oxidation. These two types of energy levels were successfully distinguished by carrying out a comparative analysis of deep level transient capacitance spectra of the MOS structures and MS structures prepared on the same samples of epitaxially grown GaAs. The identification and study of the interface states and bulk levels was also performed by investigating the transient capacitance spectra as a function of the filling pulse magnitude. It was found that in the GaAs-anodic oxide interface there are states present with a discrete energy rather than with a continuous energy distribution. The value of the capture cross section of the interface states was found to be 10 to the 14th to 10 to the 15th/sq cm, which is more accurate than the extremely large values of 10 to the -8th to 10 to the -9th/sq cm reported on the basis of conductance measurements.
Document ID
19800065209
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Kamieniecki, E.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Kazior, T. E.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lagowski, J.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C.
(MIT Cambridge, Mass., United States)
Date Acquired
August 10, 2013
Publication Date
October 1, 1980
Subject Category
Solid-State Physics
Accession Number
80A49379
Distribution Limits
Public
Copyright
Other

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