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Refractories Keep Silicon Crystals PureFormation of carbon monoxide gas is prevented by a linear of refractory material free of elemental carbon. For pressures above about 4 torr, silicon carbide can be used as refractory liner. The problem of carbide contamination can arise in crystal growth of any material that forms a carbide more stable than carbon monoxide. Prevention in such cases is possible by using noncarbon refractories in place of graphite.
Document ID
19810000095
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Schmid, F.
(Crystal Systems, Inc.)
Khattak, C. P.
(Crystal Systems, Inc.)
Date Acquired
August 11, 2013
Publication Date
September 1, 1982
Publication Information
Publication: NASA Tech Briefs
Volume: 6
Issue: 1
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-14820
Accession Number
81B10095
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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