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Capacitively-Heated Fluidized BedFluidized-bed chamber in which particles in bed are capacitively heated produces high yields of polycrystalline silicon for semiconductor devices. Deposition of unrecoverable silicon on chamber wall is reduced, and amount of recoverable silicon depositing on seed particles in bed is increased. Particles also have a size and density suitable for direct handling without consolidation, unlike silicon dust produced in heated-wall chambers.
Document ID
19810000102
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Mchale, E. J.
(Union Carbide Corp.)
Date Acquired
August 11, 2013
Publication Date
September 1, 1982
Publication Information
Publication: NASA Tech Briefs
Volume: 6
Issue: 1
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-14912
Accession Number
81B10102
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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