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Ultra-Thin-Film GaAs Solar CellsProcess based on organo-metallic chemical vapor deposition (OM/CVD) of trimethyl gallium with arsine forms economical ultrathin GaAs epitaxial films. Process has higher potential for low manufacturing cost and large-scale production compared with more-conventional halide CVD and liquid-phase epitaxy processes. By reducing thickness of GaAs and substituting low-cost substrate for single-crystal GaAs wafer, process would make GaAs solar cells commercially more attractive.
Document ID
19810000113
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Wang, K. L.
(CALTECH)
Shin, B. K.
(CALTECH)
Yeh, Y. C. M.
(CALTECH)
Stirn, R. J.
(CALTECH)
Date Acquired
August 11, 2013
Publication Date
September 1, 1982
Publication Information
Publication: NASA Tech Briefs
Volume: 6
Issue: 1
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-14930
Accession Number
81B10113
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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