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The properties of polycrystalline silicon solar cells with controlled titanium additionsBy coupling the results of electrical measurements, such as spectral response, lighted and dark I-V determinations, and deep-level-transient spectroscopy with optical and laser scan photomicroscopy, the effects of grain boundaries and impurities on silicon solar cells were evaluated. Titanium, which produces two deep levels in silicon, degrades cell performance by reducing bulk lifetime and thus cell short-circuit current. Electrically active grain boundaries induce carrier recombination in the bulk and depletion regions of the solar cell. Experimental data imply a small but measurable segregation of titanium into some grain boundaries of the polycrystalline silicon containing high Ti concentration. However, for the titanium-contaminated polycrystalline material used in this study, solar cell performance is dominated by the electrically active titanium concentration in the grains. Microstructural impacts on the devices are of secondary importance
Document ID
19810035606
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Rohatgi, A.
(Westinghouse Research and Development Center Pittsburgh, PA, United States)
Hopkins, R. H.
(Westinghouse Research and Development Center Pittsburgh, PA, United States)
Davis, J. R., Jr.
(Westinghouse Research and Development Center Pittsburgh, Pa., United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1981
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: ED-28
Subject Category
Energy Production And Conversion
Accession Number
81A20010
Distribution Limits
Public
Copyright
Other

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