Thin n-i-p silicon solar cellA space solar cell concept which combines high cell output with low diffusion length damage coefficients is presented for the purpose of reducing solar cell susceptibility to degradation from the radiation environment. High resistivity n-i-p silicon solar cells ranging from upward of 83 micron-cm were exposed to AM0 ultraviolet illumination. It is shown that high resistivity cells act as extrinsic devices under dark conditions and as intrinsic devices under AM0 illumination. Resistive losses in thin n-i-p cells are found to be comparable to those in low resistivity cells. Present voltage limitations appear to be due to generation and recombination in the diffused regions.
Document ID
19810042693
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Meulenberg, A., Jr. (Communications Satellite Corp. Clarksburg, MD, United States)
Allison, J. F. (Communications Satellite Corp. Clarksburg, MD, United States)
Arndt, R. A. (COMSAT Laboratories Clarksburg, Md., United States)