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Performance of candidate SEPS solar cells as a function of low temperature and low intensity exposure and 1 MeV electron irradiationThe behavior of 144 high-performance shallow-junction silicon solar cells under conditions of low temperature and intensity was examined. The cells represented nine combinations of thickness, base resistivity, front surface texture, and rear surface treatment. At least 16 cells of each type were individually tested both as active elements under light levels between 0.04 and 1.0 solar constant and in the dark as passive rectifiers under external forward bias. One cell type was also irradiated with 1 MeV electrons up to 2.7 x 10 to the 15th e/sq cm. The inferior cells demonstrated high ohmic and/or non-ohmic shunting. No series resistance or Schottky barrier effects were observed. Fluences beyond 10 to the 13th e/sq cm lowered cell current, probably by increasing volume recombination.
Document ID
19810045139
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Whitaker, A. F.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Little, S. A.
(NASA Marshall Space Flight Center Huntsville, Ala., United States)
Rives, C. J.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Wagner, P. E.
(Alabama, University Huntsville, Ala., United States)
Date Acquired
August 11, 2013
Publication Date
April 1, 1981
Subject Category
Energy Production And Conversion
Report/Patent Number
AIAA PAPER 81-0695
Meeting Information
Meeting: International Electric Propulsion Conference
Location: Las Vegas, NV
Country: US
Start Date: April 21, 1981
End Date: April 23, 1981
Sponsors: Japan Society for Aeronautical and Space Sciences, DGLR, AIAA
Accession Number
81A29543
Distribution Limits
Public
Copyright
Other

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