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Recrystallization of polycrystalline siliconOptical metallography is used to investigate the recrystallization properties of polycrystalline semiconductor-grade silicon. It is found that polycrystalline silicon recrystallizes at 1380 C in relatively short times, provided that the prior deformation is greater than 30%. For a prior deformation of about 40%, the recrystallization process is essentially complete in about 30 minutes. Silicon recrystallizes at a substantially slower rate than metals at equivalent homologous temperatures. The recrystallized grain size is insensitive to the amount of prestrain for strains in the range of 10-50%.
Document ID
19810048718
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Lall, C.
(Pennsylvania Univ. Philadelphia, PA, United States)
Kulkarni, S. B.
(Pennsylvania Univ. Philadelphia, PA, United States)
Graham, C. D., Jr.
(Pennsylvania Univ. Philadelphia, PA, United States)
Pope, D. P.
(Pennsylvania, University Philadelphia, Pa., United States)
Date Acquired
August 11, 2013
Publication Date
March 1, 1981
Publication Information
Publication: Materials Science and Engineering
Volume: 47
Subject Category
Nonmetallic Materials
Accession Number
81A33122
Funding Number(s)
CONTRACT_GRANT: NSF DMR-76-80994
CONTRACT_GRANT: JPL-954506
Distribution Limits
Public
Copyright
Other

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