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GaAs-oxide interface states - A gigantic photoionization effect and its implications to the origin of these statesGigantic photoionization was discovered on GaAs-oxide interfaces leading to the discharge of deep surface states with rates exceeding 1000 times those of photoionization transitions to the conduction band. It exhibits a peak similar to acceptor-donor transitions and is explained as due to energy transfer from photo-excited donor-acceptor pairs to deep surface states. This new process indicates the presence of significant concentrations of shallow donor and acceptor levels not recognized in previous interface models.
Document ID
19810058883
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Lagowski, J.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Walukiewicz, W.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Kazior, T. E.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C.
(MIT Cambridge, MA, United States)
Siejka, J.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Date Acquired
August 11, 2013
Publication Date
August 1, 1981
Publication Information
Publication: Applied Physics Letters
Volume: 39
Subject Category
Solid-State Physics
Accession Number
81A43287
Distribution Limits
Public
Copyright
Other

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