Improved liquid phase epitaxial GaAs for low series resistance Schottky barrier mixer diodesMillimeter wave Schottky barrier mixer diodes are extremely important devices for radio astronomy. The performance of the Schottky diodes depends largely on the characteristics and quality of the GaAs epitaxial materials used. Systematic manipulation of the liquid phase epitaxial growth conditions and substrate surface treatments has yielded significantly improved surface morphology. Initial problems of high resistivity interfacial layers have been reduced without the use of an in situ etchback. Two-micron diameter Schottky diodes fabricated from epitaxial layers grown at 725 C exhibit a 9-ohm series resistance very near the theoretical minimum.
Document ID
19810060353
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Binari, S. C. (Virginia Univ. Charlottesville, VA, United States)
Mattauch, R. J. (Virginia Univ. Charlottesville, VA, United States)
Oliver, J. D., Jr. (Virgina, University Charlottesville, VA, United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1981
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: SOUTHEASTCON ''81; Region 3 Conference and Exhibit