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Use of vacuum tubes in test instrumentation for measuring characteristics of fast high-voltage semiconductor devicesCircuits are described that permit measurement of fast events occurring in power semiconductors. These circuits were developed for the dynamic characterization of transistors used in inductive-load switching applications. Fast voltage clamping using vacuum diodes is discussed, and reference is made to a unique circuit that was built for performing nondestructive, reverse-bias, second-breakdown tests on transistors.
Document ID
19810061916
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Berning, D.
(National Bureau of Standards Washington, DC, United States)
Date Acquired
August 11, 2013
Publication Date
September 1, 1981
Publication Information
Publication: IEEE Transactions on Instrumentation and Measurement
Volume: IM-30
Subject Category
Electronics And Electrical Engineering
Accession Number
81A46320
Funding Number(s)
CONTRACT_GRANT: NASA ORDER C-32818-D
Distribution Limits
Public
Copyright
Other

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