Contact resistivities of sputtered TiN and Ti-TiN metallizations on solar-cell-type-silicon

The resistivities of TiN and Ti-TiN contacts on a shallow junction solar-cell-type silicon substrate have been determined by the method of the transmission line model. The contacts investigated are shown to be suitable for standard solar cells from an electrical point of view. Contact resistivity values of the order of 0.0001 ohm/sq cm as obtained for the n(+)Si-TiSi2-TiN contact system may be acceptable for concentrations up to 100 times, but lower values are necessary beyond this point.