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XPS Study of Oxide/GaAs and SiO2/Si InterfacesConcepts developed in study of SiO2/Si interface applied to analysis of native oxide/GaAs interface. High-resolution X-ray photoelectron spectroscopy (XPS) has been combined with precise chemical-profiling technique and resolution-enhancement methods to study stoichiometry of transitional layer. Results are presented in report now available.
Document ID
19820000047
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Grunthaner, F. J. (USC)
Grunthaner, P. J. (USC)
Vasquez, R. P. (USC)
Lewis, B. F. (USC)
Maserjian, J. (USC)
Madhukar, A. (USC)
Date Acquired
August 10, 2013
Publication Date
December 1, 1982
Publication Information
Publication: NASA Tech Briefs
Volume: 6
Issue: 4
ISSN: 0145-319X
Subject Category
Materials
Report/Patent Number
NPO-14969
Accession Number
82B10047
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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