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Asymmetric Die Grows Purer Silicon RibbonConcentration of carbide impurities in silicon ribbon is reduced by growing crystalline ribbon with die one wall higher than other. Height difference controls shape of meniscus at liquid/crystal interface and concentrates silicon carbide impurity near one of broad faces. Opposite face is left with above-average purity. Significantly improves efficiency of solar cells made from ribbon.
Document ID
19820000221
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Kalejs, J. P.
(Mobil Tyco Solar Energy Corp.)
Chalmers, B.
(Mobil Tyco Solar Energy Corp.)03(Mobil Tyco Solar Energy Corp.)
Surek, T.
Date Acquired
August 10, 2013
Publication Date
March 1, 1983
Publication Information
Publication: NASA Tech Briefs
Volume: 7
Issue: 1
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-15385
Accession Number
82B10221
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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