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Amorphous metallizations for high-temperature semiconductor device applicationsThe initial results of work on a class of semiconductor metallizations which appear to hold promise as primary metallizations and diffusion barriers for high temperature device applications are presented. These metallizations consist of sputter-deposited films of high T sub g amorphous-metal alloys which (primarily because of the absence of grain boundaries) exhibit exceptionally good corrosion-resistance and low diffusion coefficients. Amorphous films of the alloys Ni-Nb, Ni-Mo, W-Si, and Mo-Si were deposited on Si, GaAs, GaP, and various insulating substrates. The films adhere extremely well to the substrates and remain amorphous during thermal cycling to at least 500 C. Rutherford backscattering and Auger electron spectroscopy measurements indicate atomic diffussivities in the 10 to the -19th power sq cm/S range at 450 C.
Document ID
19820007445
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Wiley, J. D.
(Wisconsin Univ. Madison, WI, United States)
Perepezko, J. H.
(Wisconsin Univ. Madison, WI, United States)
Nordman, J. E.
(Wisconsin Univ. Madison, WI, United States)
Kang-Jin, G.
(Chinese Academy of Sciences Shanghai, United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1981
Publication Information
Publication: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.
Subject Category
Electronics And Electrical Engineering
Accession Number
82N15318
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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