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Semiconductor processingThe primary thrust of the semiconductor processing is outlined. The purpose is to (1) advance the theoretical basis for bulk growth of elemental and compound semiconductors in single crystal form, and (2) to develop a new experimental approaches by which semiconductor matrices with significantly improved crystalline and chemical perfection can be obtained. The most advanced approaches to silicon crystal growth is studied. The projected research expansion, directed toward the capability of growth of 4 inch diameter silicon crystals was implemented. Both intra and interdepartmental programs are established in the areas of process metallurgy, heat transfer, mass transfer, and systems control. Solutal convection in melt growth systems is also studied.
Document ID
19820019527
Acquisition Source
Legacy CDMS
Document Type
Other
Date Acquired
August 10, 2013
Publication Date
June 28, 1982
Publication Information
Publication: The Mater. Process. Res. Base of the Mater. Process. Center
Subject Category
Solid-State Physics
Accession Number
82N27403
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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