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High efficiency thin-film GaAs solar cellsThe paper demonstrates the feasibility of producing high-efficiency GaAs solar cells with high power-to-weight ratios by organic metallic chemical vapor deposition (OM-CVD) growth of thin epi-layers on suitable substrates. An AM1 conversion efficiency of 18% (14% AM0), or 17% (13% AM0) with a 5% grid coverage is achieved for a single-crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer. Thin GaAs epi-layers OM-CVD grown can be fabricated with good crystallographic quality using a Si-substrate on which a thin Ge epi-interlayer is first deposited by CVD from GeH4 and processed for improved surface morphology
Document ID
19820028232
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Zwerdling, S.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Wang, K. L.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Yeh, Y. C. M.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1981
Subject Category
Spacecraft Propulsion And Power
Meeting Information
Meeting: In: Intersociety Energy Conversion Engineering Conference
Location: Atlanta, GA
Start Date: August 9, 1981
End Date: August 14, 1981
Accession Number
82A11767
Distribution Limits
Public
Copyright
Other

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