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Metal/silicon interface formation - The Ni/Si and Pd/Si systemsThe valence level spectra of the Ni/Si and Pd/Si systems have been investigated using high resolution X-ray photoelectron spectroscopy. Temperature dependence studies for Ni deposited on thin thermal SiO2 demonstrate the importance of metal aggregation effects in the interpretation of binding energies as chemical shifts. Temperature studies for the Ni/Si system indicate that substantial chemical interaction occurs at the interface at temperatures as low as 100 K. These studies also show the presence of Ni in interstitial voids in the Si near the interface. A comparative study of the core and valence band features for the Ni and Pd silicides provides many valuable insights and a self-consistent picture of the attendent valence charge redistribution and its influence on the observed chemical shifts.
Document ID
19820034078
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Grunthaner, P. J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Madhukar, A.
(Southern California, University Los Angeles, CA, United States)
Mayer, J. W.
(Cornell University Ithaca, NY, United States)
Date Acquired
August 10, 2013
Publication Date
October 1, 1981
Subject Category
Solid-State Physics
Accession Number
82A17613
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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